|Dimensions||3500μm x 4500μm|
A growing trend in power electronics is to combine power switches such as IGBTs, MCTs or MOSFETs with a control ASIC in one compact module, thereby reducing the number of components, hence increasing reliability, decreasing size and improving costs. We have developed a versatile integrated gate drive (IGD) ASIC which includes the driving electronics for ABB 1.8kV/4.5kV IGBTs.
Based on previous results of current capability of metal lines an the design of very large MOS transistors, we developed an IGD which combines various control functions and a 3 A CMOS output stage to drive the significant gate capacitance of the IGBT (50nF for the 1.8kV type). The controller implements many features to allow felxibility within the system. It supports parallel connection of IGBTs to achieve higher power. Programmable turn-on and fault delays are provided to create non-overlapping timing for switches in bridge applications. As short circuit protection, the entire emitter saturation voltage is monitored by a fast (td=10ns) comparator. In addition, a comparator with a trip voltage of 500mV is included for temperature control.