|Dimensions||3060μm x 2137μm|
A notable trend in microsystem research are intelligent sensors integrated on the same silicon die and fabricated in the same technology as the electronic PF circuits. Sensors implemented in a standard (CMOS) technology, however, tend to lower sensitivity compared to those in specialized technologies. This loss in performance must be compensated by the co-integrated interface electronics, which makes the design of the latter a challenging task.
In this project a highly sensitive CMOS instrumentation amplifier has been developed. It is the critical element in the interface circuitry to CMOS compatible PF thermoelectric infrared sensors. Signals in the sub-microvolt range must be amplified. The chopper technique, combined with a bandpass filter matched to an on-chip oscillator, enables sub-microvolt offset and noise, and excellent CMRR. Neither external components nor trimming are required. The circuit has been implemented in a standard 1um single-poly CMOS process.